FDS5682 mosfet equivalent, n-channel power trench mosfet.
* rDS(ON) = 21mΩ, VGS = 10V, ID = 7.5A
* rDS(ON) = 26.5mΩ, VGS = 4.5V, ID = 6.7A
* High performance trench technology for extremely low rDS(ON)
* Low gate.
* DC/DC converters
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©2008 Fairchild Semiconductor Corporation FDS5682 Re.
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching s.
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